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preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 1 general description the ap2114 is cmos process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1a (min.) c ontinuous load current. the ap2114 features low power consumption. the ap2114 is available in 1.2v, 1.8v, 2.5v and 3.3v regulator output, and available in excellent output accuracy 1.5%, it is also available in an excellent load regulation and line regulation performance. the ap2114 is available in standard packages of sot-223, to-252-2 (1), to-252-2 (3), to-263-3, soic-8 and psop-8. features ? output voltage accuracy: 1.5% ? output current: 1a (min.) ? fold-back short current protection: 50ma ? low dropout voltage (3.3v): 450mv (typ.) @i out =1a ? stable with 4.7f flexible cap: ceramic, tantalum and aluminum electrolytic ? excellent line regulation: 0.02%/v (typ.), 0.1%/v (max.) @ i out =30ma ? excellent load regulation: 0.2% @i out =0a to 1a ? low quiescent current: 60a (1.2v/1.8v/ 2.5v) ? low output noise: 30vrms ? psrr: 68db @ freq=1khz (1.2v/1.8v) ? otsd protection ? operating temperature range: -40c to 85c ? esd: mm 400v, hbm 4000v applications ? lcd monitor ? lcd tv ? stb figure 1. package types of ap2114 sot-223 to-263-3 to-252-2 (1) to-252-2 (3) soic-8 psop-8
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 2 pin configuration h package s package (sot-223) (to-263-3) d package (to-252-2 (1)) (to-252-2 (3)) m package mp package (soic-8) (psop-8) figure 2. pin configuration of ap2114 (top view)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 3 pin descriptions pin number sot-223, to-263-3, to-252-2 (1) / (3) soic-8/psop-8 pin name function 1 1, 3, 5, 6, 7, gnd ground 2 2 vout regulated output 3 4 vin input voltage pin 8 en chip enable, h ? normal work, l ? shutdown output functional block diagram shutdown logic thermal shutdown foldback current limit v ref gnd en vin 3m vout a (b) a: sot-223, to-263-3, to-252-2 (1)/(3) b: soic-8, psop-8 (8) 1 (1, 3, 5, 6, 7) 2 (2) 3 (4) figure 3. functional block diagram of ap2114
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 4 ordering information ap2114 - g1: green circuit type package tr: tape & reel h: sot-223 d: to-252-2 (1)/to-252-2 (3) s: to-263-3 m: soic-8 mp: psop-8 package temperature range part number marking id packing type ap2114h-1.2trg1 gh12c tape & reel ap2114h-1.8trg1 gh12d tape & reel ap2114h-2.5trg1 gh14c tape & reel sot-223 -40 to 85 c ap2114h-3.3trg1 gh12e tape & reel ap2114d-1.2trg1 ap2114d-1.2g1 tape & reel ap2114d-1.8trg1 ap2114d-1.8g1 tape & reel ap2114d-2.5trg1 ap2114d-2.5g1 tape & reel to-252-2 (1)/ to-252-2 (3) -40 to 85 c ap2114d-3.3trg1 ap2114d-3.3g1 tape & reel ap2114s-1.2trg1 ap2114s-1.2g1 tape & reel ap2114s-1.8trg1 ap2114s-1.8g1 tape & reel ap2114s-2.5trg1 ap2114s-2.5g1 tape & reel to-263-3 -40 to 85 c ap2114s-3.3trg1 ap2114s-3.3g1 tape & reel ap2114m-1.2trg1 2114m-1.2g1 tape & reel ap2114m-1.8trg1 2114m-1.8g1 tape & reel ap2114m-2.5trg1 2114m-2.5g1 tape & reel soic-8 -40 to 85 c ap2114m-3.3trg1 2114m-3.3g1 tape & reel ap2114mp-1.2trg1 2114mp-1.2g1 tape & reel ap2114mp-1.8trg1 2114mp-1.8g1 tape & reel ap2114mp-2.5trg1 2114mp-2.5g1 tape & reel psop-8 -40 to 85 c ap2114mp-3.3trg1 2114mp-3.3g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. 1.2: fixed output 1.2v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 3.3: fixed out p ut 3.3v
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.5 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc esd (machine model) 400 v esd (human body model) 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.5 6.0 v operating ambient temperature range t a -40 85 c
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 6 electrical characteristics ap2114-1.2 electrical charact eristics (note 2) (v in =2.5v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test conditions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.2 v out 101.5% v input voltage v in 6.0 v maximum output current i out(max) v in =2.5v, v out =1.182v to 1.218v 1 a load regulation v out /v out i out v in =2.5v, 1ma i out 1a 0.2 1 %/a line regulation v out /v out v in 2.5v v in 6v, i out =30ma 0.02 0.1 %/v dropout voltage v drop i out =1.0a 1200 1300 mv quiescent current i q v in =2.5v, i out =0ma 60 75 a f=100hz 68 power supply rejectio n ratio psrr ripple 1vp-p v in =2.5v, i out =100ma f=1khz 68 db output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor rpd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 psop-8 43.7 sot-223 50.9 to-252-2 (1) / to-252-2 (3) 35 thermal resistance (junction to case) jc to-263-3 22 c /w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 7 electrical characteristics (continued) ap2114-1.8 electrical ch aracteristics (note 2) (v in =2.8v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test conditions min typ max unit output voltage v out v in =2.8v, 1ma i out 30ma v out 98.5% 1.8 v out 101.5% v maximum output current i out(max) v in =2.8v, v out =1.773v to 1.827v 1.0 a load regulation v out /v out i out v in =2.8v, 1ma i out 1a 0.2 1.0 %/a line regulation v out /v out v in 2.8v v in 6v, i out =30ma 0.02 0.1 %/v dropout voltage v drop i out =1.0a 500 700 mv quiescent current i q v in =2.8v, i out =0ma 60 75 a f=100hz 68 power supply rejectio n ratio psrr ripple 1vp-p v in =2.8v, i out =100ma f=1khz 68 db output voltage temperature coefficient v out /v out t i out =30ma, t a =-40c to 85c 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o loa d 20 s en pull down resistor rpd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 psop-8 43.7 sot-223 50.9 to-252-2 (1) / to-252-2 (3) 35 thermal resistance (junction to case) jc to-263-3 22 c /w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) ap2114-2.5 electrical ch aracteristics (note 2) (v in =3.5v, c in =4. 7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test co nditions min typ max unit output voltage v out v in =3.5v, 1ma i out 30ma v out 98.5% 2.5 v out 101.5% v maximum output current i out(max) v in =3.5v, v out =2.463v to 2.537v 1.0 a load regulation v out /v out i out vout=2.5v, v in =vout+1v 1ma i out 1a 0.2 1.0 %/a line regulation v out /v out v in 3.5v v in 6v, i out =30ma 0.02 0.1 %/v dropout voltage v drop i out =1a 450 750 mv quiescent current i q v in =3.5v, i out =0ma 60 80 a f=100hz 65 power supply rejection ratio psrr ripple 1vp-p v in =3.5v, i out =100ma f=1khz 65 db output voltage temperature coefficient v out /v out t i out =30ma 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o loa d 20 s en pull down resistor rpd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 psop-8 43.7 sot-223 50.9 to-252-2 (1) / to-252-2 (3) 35 thermal resistance (junction to case) jc to-263-3 22 c /w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 9 electrical characteristics (continued) ap2114-3.3 electrical ch aracteristics (note 2) (v in =4.3v, c in =4.7 f (ceramic), c out =4.7 f (ceramic), typical t a = 25c, bold typeface applies over -40 o c t a 85 o c ranges, unless otherwise specified (note 3)) parameter symbol test conditions min typ max unit output voltage v out v in =4.3v, 1ma i out 30ma v out 98.5% 3.3 v out 101.5% v maximum output current i out(max) v in =4.3v, v out =3.25v to 3.35v 1.0 a load regulation v out /v out i out v in =4.3v, 1ma i out 1a 0.2 1.0 %/a line regulation v out /v out v in 4.3v v in 6v, i out =30ma 0.02 0.1 %/v dropout voltage v drop i out =1a 450 750 mv quiescent current i q v in =4.3v, i out =0ma 65 90 a f=100hz 65 power supply rejectio n ratio psrr ripple 1vp-p v in =4.3v, i out =100ma f=1khz 65 db output voltage temperature coefficient v out /v out t i out =30ma 30 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz (no load) 30 v rms v en high voltage v ih enable logic high, regulator on 1.5 v en low voltage v il enable logic low, regulator off 0.4 v standby current i std v in =3.5v, v en in off mode 0.01 1.0 a start-up time t s n o load 20 s en pull down resistor rpd 3.0 m ? v out discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 25 c soic-8 74.6 psop-8 43.7 sot-223 50.9 to-252-2 (1) / to-252-2 (3) 35 thermal resistance (junction to case) jc to-263-3 22 c /w note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only.
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 10 typical performance characteristics figure 4. ground current vs. output current figure 5. ground current vs. output current figure 6. ground current vs. output current figure 7. ground current vs. output current 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 t a =-40 o c t a =25 o c t a =85 o c ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f ground current ( a) output current (a) 0.00.20.40.60.81.0 0 50 100 150 200 250 300 350 400 t a =-40 o c t a =25 o c t a =85 o c ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f ground current ( a) output current (a) 0.00.20.40.60.81.0 0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0 ap2114_3.3v t a =-40 o c t a =25 o c t a =85 o c v in =4.3v ground current ( a) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 450 500 ap2114_1.2v t a =-40 o c t a =25 o c t a =85 o c v in =2.5v ground current ( a) output current (a)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 8. quiescent current vs. temperature figure 9. quiescent current vs. temperature figure 10. quiescent current vs. temperature figure 11. quiescent current vs. temperature -40-20 0 20406080 30 40 50 60 70 80 90 100 v in =2.5v i out =0ma ap2114_1.2v quiescent current ( a) temperature ( o c) -40 -20 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 90 100 ap2114_1.8v v in =2.8v no load c in =4.7 f c out =4.7 f quiescent current ( a) temperature ( o c) -40 -20 0 20 40 60 80 30 40 50 60 70 80 90 100 v in =4.3v i out =0ma ap2114_3.3v quiescent current ( a) temperature ( o c) -40 -20 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 ap2114_2.5v v in =3.5v no load c in =4.7 f c out =4.7 f quiescent current ( a) temperature ( o c)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 12. quiescent current vs. input voltage figure 13. quiescent current vs. input voltage figure 14. quiescent current vs. input voltage figure 15. quiescent current vs. input voltage 23456 10 20 30 40 50 60 70 80 90 100 t a = -40 o c t a = 25 o c t a = 85 o c ap2114_1.2v i out =0ma quiescent current ( a) input voltage (v) 3.5 4.0 4.5 5.0 5.5 6.0 30 40 50 60 70 80 90 100 110 ap2114_3.3v i out =0ma quiescent current ( a) input voltage (v) t a = -40 o c t a = 25 o c t a = 85 o c 2.53.03.54.04.55.05.56.0 30 40 50 60 70 80 90 100 110 quiescent current ( a) input voltage (v) ap2114_1.8v i out =0ma t a =25 o c t a =-40 o c t a =85 o c 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 30 40 50 60 70 80 90 100 110 quiescent current ( a) input voltage (v) ap2114_2.5v i out =0ma t a =25 o c t a =-40 o c t a =85 o c
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) figure 16. output voltage vs. temperat ure figure 17. output voltage vs. temperature figure 18. output voltage vs. temperature figure 19. output voltage vs. temperature -40-20 0 20406080 1.180 1.184 1.188 1.192 1.196 1.200 1.204 1.208 1.212 1.216 ap2114_1.2v output voltage (v) temperature ( o c) i out =10ma i out =100ma i out =500ma i out =1000ma v in =2.5v -40 -20 0 20 40 60 80 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 i out =10ma i out =100ma i out =500ma i out =1000ma ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f output voltage (v) temperature ( o c) -40-20 0 20406080 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 ap2114_3.3v v in =4.3v output voltage (v) temperature ( o c) i out =10ma i out =100ma i out =500ma i out =1000ma -40-20 0 20406080 1.70 1.72 1.74 1.76 1.78 1.80 1.82 1.84 1.86 1.88 1.90 i out =10ma i out =100ma i out =500ma i out =1000ma ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f output voltage (v) temperature ( o c)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 14 typical performance characteristics (continued) figure 20. output voltage vs. input voltage figure 21. output voltage vs. input voltage figure 22. output voltage vs. input voltage figure 23. output voltage vs. input voltage 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t a =-40 o c t a =25 o c t a =85 o c ap2114_3.3v output voltage (v) input voltage (v) c in =4.7 f c out =4.7 f i out =10ma 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 output voltage (v) input voltage (v) ap2114_1.8v t a =-40 o c t a =25 o c t a =85 o c c in =4.7 f c out =4.7 f i out =10ma 123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =-40 o c t a =25 o c t a =85 o c ap2114_1.2v output voltage (v) input voltage (v) c in =4.7 f c out =4.7 f i out =10ma 1234567 0.0 0.5 1.0 1.5 2.0 2.5 ap2114_2.5v c in =4.7 f c out =4.7 f i out =10ma t a =-40 o c t a =25 o c t a =85 o c output voltage (v) input voltage (v)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) figure 24. output voltage vs. output current figure 25. output voltage vs. output current figure 26. output voltage vs. output current figure 27. output voltage vs. output current 0.0 0.2 0.4 0.6 0.8 1.0 1.150 1.155 1.160 1.165 1.170 1.175 1.180 1.185 1.190 1.195 1.200 1.205 1.210 ap2114_1.2v v in =2.5v output voltage (v) output current (a) t a =-40 o c t a =25 o c t a =85 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 t a =-40 o c t a =25 o c t a =85 o c output voltage (v) output current (a) ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v in =2.5v v in =3.3v ap2114_1.2v t a =25 o c c in =4.7 f c out =4.7 f output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =-40 o c t a =25 o c t a =85 o c output voltage (v) output current (a) ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 16 typical performance characteristics (continued) figure 28. output voltage vs. output current figure 29. output voltage vs. output current figure 30. dropout voltage vs. output current figure 31. dropout voltage vs. output current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v in =4.3v v in =5v ap2114_3.3v t a =25 o c c in =4.7 f c out =4.7 f output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 ap2114_3.3v t a =-40 o c t a =25 o c t a =85 o c v in =4.3v output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t a =-40 o c t a =25 o c t a =85 o c ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f dropout voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 t a =-40 o c t a =25 o c t a =85 o c ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f dropout voltage (v) output current (a)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 17 typical performance characteristics (continued) figure 32. dropout voltage vs. output current figure 33. max. output current vs. input voltage figure 34. max. output current vs. i nput voltage figure 35. ma x. output current vs. input voltage 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 ap2114_3.3v t a =-40 o c t a =25 o c t a =85 o c dropout voltage (v) output current (a) c in =4.7 f c out =4.7 f 2.02.53.03.54.04.55.05.56. 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ap2114_1.2v max. output current (a) input voltage (v) t a =25 o c c in =4.7 f c out =4.7 f 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 max. output current (a) input voltage (v) ap2114_1.8v c in =4.7 f c out =4.7 f v out =1.8x(1+ 1.5%) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 max. output current (a) input voltage (v) ap2114_2.5v c in =4.7 f c out =4.7 f v out =2.5x(1+ 1.5%)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 18 typical performance characteristics (continued) figure 36. max. output current vs. i nput voltage figure 37. output short current vs. temperature figure 38. output short current vs. temperature figure 39. output short current vs. temperature 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ap2114_3.3v max. output current (a) input voltage (v) c in =4.7 f c out =4.7 f t a =25 o c -40-20 0 20406080 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 v in =2.5v output short current (a) temperature ( o c) ap2114_1.2v -40 -20 0 20 40 60 80 100 120 20 30 40 50 60 70 ap2114_1.8v v in =2.8v c in =4.7 f c out =4.7 f output short current (ma) temperature ( o c) -40 -20 0 20 40 60 80 100 120 20 30 40 50 60 70 ap2114_2.5v v in =3.5v c in =4.7 f c out =4.7 f output short current (ma) temperature ( o c)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 19 typical performance characteristics (continued) figure 40. output short current vs. temperature figure 41. psrr vs. frequency figure 42. psrr vs. frequency figure 43. psrr vs. frequency -40-20 0 20406080 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 v in =4.3v ap2114_3.3v output short current (a) temperature ( o c) 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2114_1.2v t a =25 o c c in =1 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vp-p 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2114_1.8v t a =25 o c c in =4.7 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vp-p 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 ap2114_2.5v t a =25 o c c in =4.7 f c out =4.7 f i out =10ma psrr (db) frequency (hz) ripple=1vp-p
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 20 typical performance characteristics (continued) figure 44. psrr vs. frequency figure 45. load transient v outac 50mv/div i out 500ma/div 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 i out =10ma i out =100ma ap2114_3.3v t a =25 o c c in =1 f c out =4.7 f psrr (db) frequency (hz) ripple=1vp-p
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 21 typical application figure 46. typical application of ap2114
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 22 mechanical dimensions sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 23 mechanical dimensions (continued) to-252-2 (1) unit: mm(inch)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 24 mechanical dimensions (continued) to-252-2 ( 3) unit: mm(inch) 1.290.1 2.900ref 1.400(0.055) 1.700(0.067) 0.470(0.019) 0.600(0.024) 5 9 0 8 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 4.700ref 5.250ref 6.500(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236) 6.200(0.244) 0.720(0.028) 0.850(0.033) 2.286(0.090) bsc 0.720(0.028) 0.900(0.035) 0.900(0.035) 1.250(0.049) 1.800ref 8 0 0.600(0.024) 1.000(0.039) 7 3 9 5
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 25 mechanical dimensions (continued) to-263-3 unit: mm(inch) 7 3 7 8 . 6 4 0 ( 0 . 3 4 0 ) 9 . 6 5 0 ( 0 . 3 8 0 ) 0.990(0.039) 0.510(0.020) 2.540(0.100) 1.150(0.045) 9.650(0.380) 3 1 4 . 7 6 0 ( 0 . 5 8 1 ) 8.840(0.348) 2.640(0.104) 0.020(0.001) 8 2 0 6 0.380(0.015) 2 . 3 9 0 ( 0 . 0 9 4 ) 0.360(0.014) 2 . 2 0 0 ( 0 . 0 8 7 ) 7 0 10.290(0.405) 4 . 0 7 0 ( 0 . 1 6 0 ) 4 . 8 2 0 ( 0 . 1 9 0 ) 1.390(0.055) 1.150(0.045) 1.390(0.055) 2.540(0.100) 1.270(0.050) 1.390(0.055) 2 . 6 9 0 ( 0 . 1 0 6 ) 1 5 . 7 4 0 ( 0 . 6 2 0 ) 0.250(0.010) 2.700(0.106) 0.400(0.016) 5 . 6 0 0 ( 0 . 2 2 0 ) 7.420(0.292) 7.980(0.314) 2.540(0.100) 2.540(0.100)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 26 mechanical dimensions (continued) soic-8 unit: mm(inch) r0.150(0.006)
preliminary datasheet 1a low noise cmos ldo regulator with enable ap2114 oct. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 27 mechanical dimensions (continued) psop-8 unit: mm(inch) 3.202(0.126) 3.402(0.134)
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